i don't know enough about heat generation in CPUs to say how much of a factor less ideal heat dissipation is in this case.
to be fair about moore's law, yes, the density of transistors is increasing according to said "law," but the limiting factor to actual increased speed it/is going to be heat dissipation.
as for increased transistor density, the limiting factor is going to be the gate oxide, since below a certain thickness electron tunneling is going to limit how thin a gate oxide and be. on top of that, the gate oxide in a MOSFET has to be significantly thinner than the width of the transistor. to make a thinner dielectric layer, we could use other oxides besides silicon dioxide with higher k values (higher polarizability), most notably hafnium oxide.
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